Fabrication and luminescent properties of Eu(BMPPA)3BPy complex and its functionalized silica nanocomposites

Luminescent silica nanocomposites functionalized with a Eu-complex have been prepared and characterized.The europium complex is composed of 2,2'-bipyridyl(BPy) and 2-(4-bromomethyI)-phenylpropionic acid(BMPPA),which contains highly active benzyl bromide substituents and can covalently bind with poly(4-vinylpyridine)(P4VP)-modified silica nanoparticles(nanoSiO_2P4VP) to form nanoSiO_2P4VPEuBPy composites.Microscopic images revealed that the nanoSiO_2P4VPEuBPy composites easily formed aggregates,due to an inter-particle binding caused by the benzyl bromide among the composites.The as-prepared nanocomposites showed the typical emissions of Eu(III) ions at the wavelengths from 580 nm to 750 nm designated to the ~5D_0→~7F_n transitions.Time-resolved fluorescence decay measurements revealed that the emission lifetime was approximately 0.204 ms and 0.576 ms for the nanoSiO_2EuBPy composites,a little shorter than that in the Eu(BMPPA)_3BPy complex.     

Mono‐ and Dinuclear Phosphorescent Rhenium(I) Complexes: Impact of Subcellular Localization on Anticancer Mechanisms

Elucidation of relationship among chemical structure, cellular uptake, localization, and biological activity of anticancer metal complexes is important for the understanding of their mechanisms of action. Organometallic rhenium(I) tricarbonyl compounds have emerged as potential multifunctional anticancer drug candidates that can integrate therapeutic and imaging capabilities in a single molecule. Herein, two mononuclear phosphorescent rhenium(I) complexes ( Re1 and Re2 ), along with their corresponding dinuclear complexes ( Re3 and Re4 ), were designed and synthesized as potent anticancer agents. The subcellular accumulation of Re1–Re4 was conveniently analyzed by confocal microscopy in situ in live cells by utilizing their intrinsic phosphorescence. We found that increased lipophilicity of the bidentate ligands could enhance their cellular uptake, leading to improved anticancer efficacy. The dinuclear complexes were more potent than the mononuclear counterparts. The molecular anticancer mechanisms of action evoked by Re3 and Re4 were explored in detail. Re3 with a lower lipophilicity localizes to lysosomes and induces caspase‐independent apoptosis, whereas Re4 with higher lipophilicity specially accumulates in mitochondria and induces caspase‐independent paraptosis in cancer cells. Our study demonstrates that subcellular localization is crucial for the anticancer mechanisms of these phosphorescent rhenium(I) complexes.     

Post‐Synthetic Polymerization of UiO‐66‐NH2 Nanoparticles and Polyurethane Oligomer toward Stand‐Alone Membranes for Dye Removal and Separation

Metal–organic frameworks (MOFs) are widely used as porous materials in the fields of adsorption and separation. However, their practical application is largely hindered by limitations to their processability. Herein, new UiO‐66‐Urea‐based flexible membranes with MOF loadings of 50 ( 1 ), 60 ( 2 ), and 70 wt % ( 3 ) were designed and prepared by post‐synthetic polymerization of UiO‐66‐NH₂ nanoparticles and a polyurethane oligomer under mild conditions. The adsorption behavior of membrane 3 towards four hydrophilic dyes, namely, eosin Y (EY), rhodamine B (RB), malachite green (MG), and methylene blue (MB), in aqueous solution was studied in detail. It exhibits strong adsorption of EY and RB but weak adsorption of MG and MB in aqueous solution. Owing to the selective adsorption of these hydrophilic dyes, membrane 3 can remove EY and RB from aqueous solution and completely separate EY/MB, RB/MG, and RB/MB mixtures in aqueous solution. In addition, the membrane is uniformly textured, easily handled, and can be reused for dye adsorption and separation.     

Copper‐Catalyzed Difunctionalization of Activated Alkynes by Radical Oxidation–Tandem Cyclization/Dearomatization to Synthesize 3‐Trifluoromethyl Spiro[4.5]trienones

A copper‐catalyzed difunctionalizing trifluoromethylation of activated alkynes with the cheap reagent sodium trifluoromethanesulfinate (NaSO₂CF₃ or Langlois’ reagent) has been developed incorporating a tandem cyclization/dearomatization process. This strategy affords a straightforward route to synthesis of 3‐(trifluoromethyl)‐spiro[4.5]trienones, and presents an example of difunctionalization of alkynes for simultaneous formation of two carbon–carbon single bonds and one carbon–oxygen double bond.     

In Situ Synthesis and Characterization of Poly(aryleneethynylene)‐Grafted Reduced Graphene Oxide

Using highly soluble bromo‐functionalized reduced graphene oxide (RGBr) as a key graphene template for surface‐directing Sonogashira–Hagihara polymerization, a novel soluble poly(arylene‐ethynylene)‐grafted reduced graphene oxide, hereafter abbreviated as PAE‐g‐RGO, was prepared in situ. The entirely different electron distribution of LUMO and HOMO of PAE‐g‐RGO suggested the existence of a charge‐transfer (CT) state (PAE^.?–RGO^.+). The negative ΔG_CS value (?2.57 eV) indicates that the occurrence of the charge separation via ¹RGO* in o‐DCB is exothermic and favorable. Upon irradiation with 365 nm light, the light‐induced electron paramagnetic resonance (LEPR) spectrum of PAE‐g‐RGO showed a decrease in the spin‐state density owing to photoinduced intramolecular electron transfer events in this system. A sandwich‐type Al/PAE‐g‐RGO/ITO device showed representative bistable electrical switching behavior. The nonvolatile memory performance was attributed to the CT‐induced conductance changes, which was supported by molecular computation results and conductive atomic force microscopy (C‐AFM) images.     

In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier.F-based etching can be self-terminated after removing SiN,leaving the AlGaN barrier in the gate region.With this in-situ SiN and thin barrier etch-stop structure,the short channel effect can be suppressed,meanwhile achieving highly precisely controlled and low damage etching process.The device shows a maximum drain current of 1022 mA/mm,a peak transconductance of 459 mS/mm,and a maximum oscillation frequency(fmax)of 248 GHz.